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| 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency.(fT = 80MHZ) 4) Complements the 2SB1275 / 2SB1236A. External dimensions (Unit : mm) 2SD2211 1.0 1.5 0.4 (1) 4.0 2.5 0.5 3.0 0.5 (3) 1.5 0.4 1.5 4.5 1.6 (2) ROHM : MPT3 EIAJ : SC-62 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SD1857A Collector power dissipation 2SD2211 2SD1918 Tj Tstg PC Symbol VCBO VCEO VEBO IC Limits 160 160 5 1.5 3 1 0.5 2 1 10 150 -55 +150 Unit V V V A(DC) A(Pulse) W W W W W(Tc=25C) C C 2SD1918 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.4 0.65 2.3 1 2 3 0.9 1.0 0.5 0.5 1.5 2.5 9.5 2.3 0.8Min. 5.1 6.5 C0.5 Junction temperature Storage temperature ROHM : CPT3 EIAJ : SC-63 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 1 Pw=200msec duty=1/2 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. 3 When mounted on a 40 x 40 x 0.7mm ceramic board. 2SD1857A 6.8 2.5 0.9 0.65Max. 1.0 0.5 (1) (2) (3) 2.54 2.54 4.4 1.05 14.5 Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) * Denotes hFE 2SD2211 MPT3 QR DQ* T100 1000 2SD1918 CPT3 QR - TL 2500 2SD1857A ATV PQ - TV2 2500 0.45 Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE 2SD1857A fT Cob Min. 160 160 5 - - - - Typ. - - - - - - - - - Max. - - - Unit V V V A A V V - - Conditions IC = 50A IC = 1mA IE = 50A VCB = 120V VEB = 4V IC/IB = 1A/0.1A IC/IB = 1A/0.1A VCE/IC = 5V/0.1A VCE = 5V , IE = -0.1A , f = 30MHz VCB = 10V , IE = 0A , f = 1MHz 1 1 2 1.5 390 270 - - Base-emitter saturation voltage DC current 2SD2211,2SD1918 120 82 - - transfer ratio Transition frequency Output capacitance 80 20 MHz pF Measured using pulse current. Rev.A 1/3 2SD2211 / 2SD1918 / 2SD1857A Transistors Electrical characteristic curves 1.0 Ta=25C 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 10 1000 VCE=5V Ta=25C DC CURRENT GAIN : hFE 0.8 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) A 10m 5 2 1 0.5 0.2 0.1 0.05 0.02 Ta=100C Ta=25C Ta= -25C 500 200 100 50 20 10 5 2 5V VCE=10V 0.6 0.4 0.2 IB=1mA 0 0 1 2 3 4 5 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics Fig.3 DC current gain vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 VCE=5V 500 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 IC/IB=20 10 Ta=25C 10 5 2 1 0.5 VBE(sat) 0.2 0.1 -25C VCE(sat) 0.02 0.05 0.1 0.2 0.5 1 2 25C Ta= -25C 100C IC/IB=10 DC CURRENT GAIN : hFE Ta=100C 200 100 50 20 10 5 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 25C -25C 0.05 0.02 0.01 0.01 5 10 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ) Fig.5 Collector-emitter saturation voltage vs. collector current Fig.6 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (A) 500 200 100 50 20 10 5 2 1 -1 -2 -5 -10 -20 -50 Ta=25C VCE=5V 1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 10 Ta=25C f=1MHz IE=0A 5 2 1 500m 200m 100m 50m 20m 10m 5m Ic Max (Pulse) Pw 0m =1 Ta=25C Single nonrepetitive pulse -100 -200 -500 -1000 20 50 100 2m 1m Recommended land 0.1 0.2 0.5 2 5 EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Gain bandwidth products vs. emitter current Fig.8 Collector output capacitance vs. collector-base voltage Fig.9 Safe operating area (2SD2211) Rev.A Pw =1 m 00 s s C D 10 20 50 100 200 500 1000 2/3 2SD2211 / 2SD1918 / 2SD1857A Transistors 10 5 COLLECTOR CURRENT : IC (A) Ic Max (Pulse) = Pw m 10 2 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 0.1 0.2 Ta=25C Single nonrepetitive pulse s = Pw s 0m 10 C D 0.5 1 2 5 10 20 50 100 200 500 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area (2SD1918) Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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